NXP BUK961R5-30E,118 MOSFET

Vgs(th): 2.1 V

Vgs (Max): 10V

Gate Charge (Qg): 93.4nC

Power consumption: 324W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 120A

Input Capacitance (Ciss): 14500pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.3mOhm

Drive Voltage (Max Rds On, Min Rds On): 5|10V

Datasheet