NXP MRFX1K80HR5 RF 파워 MOSFET 65V LDMOS 트랜지스터

Gain: 25.1 dB

Technology: Si

Unit Weight: 13.159 g

Output Power: 1.8 kW

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 400 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.247 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 43 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 44.7 S

Vds - Drain-Source Breakdown Voltage: 179 V

Vgs th - Gate-Source Threshold Voltage: 2.9 V