NXP PHU66NQ03LT,127 트랜스 MOSFET N-채널 25V 66A 레일

Vgs(th): 2 V

Vgs (Max): 20V

Gate Charge (Qg): 12nC

Power consumption: 93W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 66A

Input Capacitance (Ciss): 860pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 10.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 5|10V