NXP PHW80NQ10T,127 트랜스 MOSFET N-채널 100V 80A

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 109nC

Power consumption: 263W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 80A

Input Capacitance (Ciss): 4720pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 15mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V