NXP PMF3800SN,115 Power MOSFET

Type: Power MOSFET

Vgs(th): 3.3 V

Vgs (Max): 15V

Gate Charge (Qg): 0.85nC

Power consumption: 560mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 260mA

Input Capacitance (Ciss): 40pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.5Ohm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V