onsemi 2SB1205T-TL-E BJTs - 바이폴라 트랜지스터 BIP PNP 5A 20V

Technology: Si

Unit Weight: 1.800 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 320 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: - 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 250 mV