onsemi 2SK3557-6-TB-E JFET 저주파 증폭기

Technology: Si

Unit Weight: 40 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 mW

Gate-Source Cutoff Voltage: - 700 mV

Maximum Drain Gate Voltage: - 15 V

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 35 mS

Vgs - Gate-Source Breakdown Voltage: - 15 V

Vds - Drain-Source Breakdown Voltage: 15 V