onsemi 30C02CH-TL-E BJTs - 바이폴라 트랜지스터 BIP NPN 0.7A 30V

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 700 mW

DC Current Gain hFE Max: 800

Gain Bandwidth Product fT: 540 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 700 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 85 mV