onsemi AFGB40T65SQDN IGBT 트랜지스터 650V/40A FS4 IGBT

Technology: Si

Unit Weight: 2.067 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 238 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 80 A