onsemi BC858BWT1G BJTs - 바이폴라 트랜지스터 100mA 30V PNP

Width: 1.24 mm

Height: 0.85 mm

Length: 2.1 mm

Technology: Si

Unit Weight: 6.200 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 650 mV