onsemi ECH8309-TL-H MOSFET 스위칭 장치

Technology: Si

Unit Weight: 19.450 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 9.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V