onsemi ECH8690-TL-H MOSFETs PCH+NCH 4V 드라이브 시리즈

Technology: Si

Unit Weight: 19.450 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 4.7 A, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 55 mOhms, 94 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V