onsemi FDU8796_F071 MOSFET

Vgs(th): 2.5 V

Vgs (Max): 20V

Gate Charge (Qg): 52nC

Power consumption: 88W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 35A

Input Capacitance (Ciss): 2610pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 5.7mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet