onsemi FGH40T120SQDNL4 IGBT 트랜지스터 IGBT 1200V 40A UFS

Technology: Si

Unit Weight: 9.195 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 454 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.78 V

Continuous Collector Current at 25 C: 160 A