onsemi MJD31CT4G BJTs - 바이폴라 트랜지스터 3A 100V 15W NPN

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 470 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.2 V