onsemi MJE18004G BJTs - 바이폴라 트랜지스터 5A 1000V 75W NPN

Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

Gain Bandwidth Product fT: 13 MHz

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 1 kV

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 14

Collector- Emitter Voltage VCEO Max: 450 V

Collector-Emitter Saturation Voltage: 920 mV