onsemi MJF15030G BJTs - 바이폴라 트랜지스터 8A 150V 36W NPN

Width: 4.9 mm

Height: 9.24 mm

Length: 10.63 mm

Technology: Si

Unit Weight: 2.300 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 36 W

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 500 mV