onsemi NCD5701CDR2G 하프 브리지 IGBT, 고전류, 독립형

Shutdown: Shutdown

Fall Time: 19 ns

Rise Time: 18 ns

Technology: Si

Mounting Style: SMD/SMT

Output Current: 4 A

Output Voltage: 800 mV, 14.1 V

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Supply Voltage - Max: 30 V

Supply Voltage - Min: 20 V

Pd - Power Dissipation: 700 mW

Operating Supply Current: 10 uA

Maximum Turn-On Delay Time: 75 ns

Maximum Turn-Off Delay Time: 75 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C