onsemi NGTB25N120FL2WG IGBT 트랜지스터 1200V/25 FAST IGBT FSII T

Technology: Si

Unit Weight: 6.856 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 385 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 50 A