onsemi NGTB40N65IHRTG IGBT 트랜지스터 650V/40A 모놀리식 RC IG

Technology: Si

Unit Weight: 5.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 405 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 80 A