onsemi NJVMJD45H11G BJTs - 바이폴라 트랜지스터 BIP DPAK PNP 8A 80V

Technology: Si

Unit Weight: 350 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 20 W

Gain Bandwidth Product fT: 90 MHz

Emitter- Base Voltage VEBO: 5 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V