onsemi NTJD4152PT1G MOSFET 20V 0.88mA P-채널 ESD 보호

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 3.5 ns

Rise Time: 6.5 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 2.2 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 272 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 5.8 ns

Typical Turn-Off Delay Time: 13.5 ns

Id - Continuous Drain Current: 880 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V