onsemi NTLJD3115PT1G MOSFET 소형 신호 PFET 2X2 20V 4.1A 106MOHM

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 13.2 ns, 15 ns

Rise Time: 13.2 ns, 15 ns

Technology: Si

Unit Weight: 8.800 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 6.2 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5.2 ns, 5.5 ns

Typical Turn-Off Delay Time: 13.7 ns, 19.8 ns

Id - Continuous Drain Current: 3.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 106 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V