onsemi NTMYS013N08LHTWG MOSFETs 파워 MOSFET 80 V, 42A, 13.1mohm 단일 N-채널

Fall Time: 6 ns

Rise Time: 53 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: SIngle

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 53 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 29 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 42 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 55 S

Rds On - Drain-Source Resistance: 17 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2 V