onsemi NVH820S75L4SPB IGBT 실리콘 모듈 750V, 820A SSD

Technology: Si

Unit Weight: 1.289 kg

Configuration: 6-Pack

Mounting Style: SMD/SMT

Pd - Power Dissipation: 1 kW

Gate-Emitter Leakage Current: 500 uA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 750 V

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 600 A