onsemi NVXK2TR40WXT 하프 브리지 APM32 SIC H-브리지 파워 모듈

Width: 29 mm

Height: 5.8 mm

Length: 44.2 mm

Fall Time: 9 ns

Rise Time: 20 ns

Technology: SiC

Configuration: Dual Half-Bridge

Mounting Style: Through Hole

Number of Channels: 4 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 319 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 27 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 59 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.3 V