onsemi NXH003P120M3F2PTNG 하프 브리지 1200V 3M M3S SiC 하프브리지 SI3N4 DBC 포함 F2 모듈

Fall Time: 16 ns

Rise Time: 17 ns

Technology: SiC

Configuration: Half Bridge

Mounting Style: Press Fit

Vf - Forward Voltage: 4.8 V

Pd - Power Dissipation: 1.482 kW

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 49 ns

Typical Turn-Off Delay Time: 144 ns

Id - Continuous Drain Current: 435 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 5.88 mohms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.4 V