onsemi NXH010P120M3F1PG 하프 브리지 10M 옴 1200V 40A M3S SIC 하프 브리지 모듈

Width: 34.1 mm

Height: 12.35 mm

Length: 63.3 mm

Fall Time: 15 ns

Rise Time: 15 ns

Technology: SiC

Configuration: Half-Bridge

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 272 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 98 ns

Id - Continuous Drain Current: 105 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 14.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.4 V