onsemi NXH010P120MNF1PG 하프 브리지 SiC 모듈 - EliteSiC 2팩 하프 브리지 토폴로지, 1200 V, 10 mohm SiC M1 MOSFET 프레스핏 핀

Fall Time: 13 ns

Rise Time: 16.2 ns

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Pd - Power Dissipation: 413 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 36 ns

Typical Turn-Off Delay Time: 135.2 V

Id - Continuous Drain Current: 114 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V