onsemi NXH010P90MNF1PG 하프 브리지 SiC 모듈, 2팩 하프 브리지 토폴로지, 900 V, 10 mohm SiC M2 MOSFET

Fall Time: 12 ns

Rise Time: 16 ns

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Pd - Power Dissipation: 328 W

Vgs - Gate-Source Voltage: - 8 V, + 18 V

Typical Turn-On Delay Time: 53 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 154 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V