onsemi NXH030F120M3F1PTG 풀 브리지 30M 옴 1200V 40A M3S SIC 풀 브리지 모듈

Width: 34.1 mm

Height: 12.35 mm

Length: 63.3 mm

Fall Time: 9.3 ns

Rise Time: 9 ns

Technology: SiC

Configuration: Full-Bridge

Mounting Style: Screw Mount

Number of Channels: 4 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 40.4 ns

Typical Turn-Off Delay Time: 109.5 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 38.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.4 V