onsemi NXH040P120MNF1PG 하프 브리지 SiC 모듈, 2팩 하프 브리지 토폴로지, 1200 V, 40 mohm SiC M1 MOSFET

Fall Time: 6.5 ns

Rise Time: 6.35 ns

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Pd - Power Dissipation: 113 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 43.3 ns

Typical Turn-Off Delay Time: 97 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 56 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V