onsemi NXH400B100H4Q2F2PG 부스트 파워 모듈 N06NF Q2BOOST

Technology: Si

Configuration: IGBT Inverter

Mounting Style: Screw Mount

Pd - Power Dissipation: 396 W

Gate-Emitter Leakage Current: 1 uA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.88 V

Continuous Collector Current at 25 C: 164 A