onsemi NXH450B100H4Q2F2PG SiC IGBT 모듈 Si/SiC 하이브리드 모듈, 3채널 대칭 부스트 1000 V, 150 A IGBT, 1200 V, 30 A SiC 다이오드 프레스핏 핀

Technology: Si

Configuration: Dual

Pd - Power Dissipation: 234 W

Gate-Emitter Leakage Current: 800 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 101 A