onsemi NXH80T120L2Q0P2G IGBT 실리콘 모듈 PIM Q0 T-타입 NPC 80A 1200V 프레스-핏 핀

Technology: Si

Configuration: Quad

Mounting Style: SMD/SMT

Pd - Power Dissipation: 158 W

Gate-Emitter Leakage Current: 300 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 67 A