onsemi PCP1103-TD-H BJTs - 바이폴라 트랜지스터 BIP PNP 1.5A 30V

Technology: Si

Unit Weight: 52.680 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 3.5 W

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 450 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 250 mV