PANJIT PJD55N04V-AU_L2_002A1 MOSFETs 40V N-채널 향상형 MOSFET

Fall Time: 8 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 297 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 107 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 128 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V