PANJIT PJMD280N60E1_L2_00601 MOSFETs 600V/ 280mohms / 13.8A/ Easy to driver SJ MOSFET

Fall Time: 50 ns

Rise Time: 61 ns

Technology: Si

Unit Weight: 297 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 122.7 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 39 ns

Typical Turn-Off Delay Time: 119 ns

Id - Continuous Drain Current: 13.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V