PANJIT PJQ5458A_R2_00001 MOSFETs 60V N-채널 향상 모드 MOSFET

Technology: Si

Unit Weight: 80 mg

Qg - Gate Charge: 14 nC

Moisture Sensitive: Yes

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 16 A

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V