PANJIT PJS6407_S1_00001 MOSFETs 30V P-채널 향상형 MOSFET

Technology: Si

Unit Weight: 18 mg

Qg - Gate Charge: 14 nC

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 4.9 A

Rds On - Drain-Source Resistance: 64 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V