PANJIT PJS6421-AU_S1_000A1 MOSFETs 20V P-채널 향상형 MOSFET

Technology: Si

Unit Weight: 18 mg

Qualification: AEC-Q101

Qg - Gate Charge: 16.5 nC

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 7.4 A

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V