PANJIT PSMQC280N10LS2_R2_00201 MOSFETs 100V 28m 옴 우수한 저 FOM 헤드라이트 솔루션용 MOSFET

Fall Time: 1.6 ns

Rise Time: 2.2 ns

Technology: Si

Unit Weight: 0.080 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 29.4 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 8.2 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V