Renesas Electronics 70T3519S133BCG SRAM(동기식)

Density: 9 Mbit

Package: 256BGA

Mounting: Surface Mount

Rad Hard: 0

MSL Level: MSL 3 - 168 hours

Packaging: Tray

SRAM Type: Synchronous SRAM

Timing Type: Synchronous

Architecture: Flow-Through|Pipelined

Memory Density: 9 Mbit

Number of Ports: 2

Number of Words: 256 kWords

Screening Level: Commercial

Address Bus Width: 36 Bit

Maximum Clock Rate: 133 MHz

Supply Voltage Nom: 2.5 V

Clock Frequency Max: 133 MHz

Number of I/O Lines: 72 Bit

Operating Temperature: 0 to 70 °C

Data Rate Architecture: SDR

Number of Bits per Word: 36 Bit

Maximum Operating Current: 370 mA

Operating Temperature Max: 70 °C

Operating Temperature Min: 0 °C

Maximum Random Access Time: 12|3.6 ns

Typical Operating Supply Voltage: 2.5000 V

Datasheet