Renesas Electronics NP50P04KDG-E1-AY MOSFET 소형 신호 저전압 파워 MOSFET

Width: 9.15 mm

Height: mm

Length: 10 mm

Fall Time: 45 ns

Rise Time: 45 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 405 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 40 V