Renesas Electronics NP60N04VUK-E1-AY MOSFETs 파워 디바이스 E 자동차용 MOS MP-3ZP

Width: 6.1 mm

Height: 2.65 mm

Length: 6.5 mm

Fall Time: 7 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 42 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 105 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 22 S

Rds On - Drain-Source Resistance: 3.85 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 4 V