Renesas Electronics RBN40H65T1FPQ-A0#CB0 IGBT 트랜지스터 파워 트랜지스터 650V 40A IGBT G8H

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 185 W

Gate-Emitter Leakage Current: 1 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 80 A