Renesas Electronics RJE0616JSP-00#J0 MOSFETs 파워 MOSFET

Width: 3.95 mm

Height: mm

Length: 4.9 mm

Fall Time: 1.05 us

Rise Time: 2.8 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 16 V, + 2.5 V

Typical Turn-On Delay Time: 3.2 us

Typical Turn-Off Delay Time: 1.55 us

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V