Renesas Electronics RJK03M1DPA-00#J5A MOSFETs BEAM2 시리즈 FET 30V WPAK 2.5mOhm

Width: mm

Height: mm

Length: mm

Technology: Si

Unit Weight: 75 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 45 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V