Renesas Electronics RJK1028DNS-00#J5 MOSFETs MOSFET, 30V, 3x3 패키지

Width: 3.3 mm

Height: 0.8 mm

Length: 3.3 mm

Fall Time: 5.6 ns

Rise Time: 4.8 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 10 W

Vgs - Gate-Source Voltage: - 5 V, + 12 V

Typical Turn-On Delay Time: 8.3 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 8.8 S

Rds On - Drain-Source Resistance: 165 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V