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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Width: mm
Height: mm
Length: mm
Fall Time: 34 ns
Rise Time: 33 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 38 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 65 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 24 ns
Typical Turn-Off Delay Time: 49 ns
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 54 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
